Conductive non-metallic self-passivating non-corrodable IC bondi

Details Conductive non-metallic self-passivating non-corrodable IC bondi Conductive non-metallic self-passivating non-corrodable IC bondi

1984-10-22

1986-11-11

James, Andrew J.

357 67, 357 68, 357 65, 357 54, 357 59, 357 52, 357 55, 357 53, 357 84, H01L 2348

Patent

active

046225765

ABSTRACT:
A monolithic silicon integrated circuit chip is provided with a conductive passivating coating over the metal bonding pads. The coating is composed of doped polysilicon or silicon metal nitride. Such materials provide a self-passivating, non-corrodable surface capable of forming a conventional eutectic bond to a connecting wire. A moat is etched through this layer outside the confines of the bonding pad so that they can be electrically isolated. Eutectic wire bonds are then made to the coating where they would ordinarily be made to the pad metal. Since the passivating coating fully covers the bonding pad a substantial increase in passivation occurs. If desired the passivating coating can be overcoated with a thin metal layer to facilitate probing of the circuits in wafer form.

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Murarka, "Refractory Silicides for Integrated Circuits," J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-792.
IEEE Transactions on Electron Devices, Oct. 1969, pp. 875-876.

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