Common MOSFET process for plural devices

Details Common MOSFET process for plural devices Common MOSFET process for plural devices

2007-09-25

2007-09-25

Lee, Hsien-Ming (Department: 2823)

Semiconductor device manufacturing: process

Making regenerative-type switching device

Having field effect structure

C438S138000, C438S156000, C438S173000, C438S192000

Reexamination Certificate

active

11054473

ABSTRACT:
A core process is described for the manufacture of a Schottky, MOSFET or Accufet, using a plurality of identical manufacturing steps, including spaced trenches, in a single production line, with the device type to be produced being defined at an implant and diffusion stage for forming very low concentration mesas for a Schottky; higher concentration mesas with source regions for Accufet devices and a channel implant and source implant for a vertical conduction MOSFET.

REFERENCES:
patent: 6825105 (2004-11-01), Grover et al.
patent: 2003/0047778 (2003-03-01), Nakamura et al.

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