Semiconductor-on-insulator silicon wafer

Details Semiconductor-on-insulator silicon wafer Semiconductor-on-insulator silicon wafer

2007-05-15

2007-05-15

Hoang, Quoc (Department: 2818)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S311000, C257S347000, C257SE21561

Reexamination Certificate

active

11054579

ABSTRACT:
A method of fabricating a semiconductor-on-insulator semiconductor wafer is described that includes providing first and second semiconductor substrates. A first insulating layer is formed on the first substrate with a first predetermined stress and a second insulating layer is formed on the second substrate with a second predetermined stress different than the first predetermined stress. The first insulating layer is bonded to the second insulating layer to form a composite insulating layer bonding the first substrate to the second substrate and a portion of the one substrate is removed to form a thin crystalline active layer on the composite insulating layer. The first and second insulating layers are formed with different stresses to provide a desired composite stress, which can be any stress from compressive to unstressed to tensile, depending upon the desired application.

REFERENCES:
patent: 6661065 (2003-12-01), Kunikiyo
patent: 6949451 (2005-09-01), Yeo et al.
patent: 2005/0282318 (2005-12-01), Dao

Affiliated with

Also associated with

Rating

Semiconductor-on-insulator silicon wafer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor-on-insulator silicon wafer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor-on-insulator silicon wafer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3797253