Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-07-31
2007-07-31
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S761000, C257S773000, C257S774000, C257S775000, C257S759000, C257S760000
Reexamination Certificate
active
10816955
ABSTRACT:
The semiconductor device comprises a lower interconnection part12which is formed on a silicon substrate10and includes an inter-layer insulation film36formed of a low-k film32and a hydrophilic insulation film34formed on the low-k film32,and an interconnection layer44a, 44bburied in interconnection trenches38a, 38bformed in the inter-layer insulation film36and having an interconnection pitch which is a first pitch; and an intermediate interconnection part14which is formed on the lower interconnection part12and includes an inter-layer insulation film142formed of low-k films136, 140,an interconnection layer152a, 152bburied in interconnection trenches146a, 146bformed in the inter-layer insulation film142and having an interconnection pitch which is a second pitch larger than the first pitch, and an SiC film154formed directly on the low-k film140and the interconnection layer152a, 152b.
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Fujitsu Limited
Gebremariam Samuel A.
Westerman, Hattori, Daniels & Adrian , LLP.
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