High voltage semiconductor device having an improved DV/DT capab

Details High voltage semiconductor device having an improved DV/DT capab High voltage semiconductor device having an improved DV/DT capab

1982-12-06

1986-11-11

Clawson, Jr., Joseph E.

357 20, 357 236, 357 55, 357 68, 357 86, H01L 2974

Patent

active

046225722

ABSTRACT:
A semiconductor device used for high voltage applications exhibits reduced susceptibility to being inadvertently turned-on by capacitive charging currents generated by relatively high voltage transients impressed across an anode and a cathode of the device. The capacitive charging currents are manifested as a gate current which in a thyristor renders the device conductive if it exceeds a critical value and in a transistor is multiplied by the current gain. Various embodiments employing capacitors are disclosed for reducing the level and/or the duration of the transient produced gate current.

REFERENCES:
patent: 3368121 (1968-02-01), Herlet et al.
patent: 3619738 (1971-11-01), Otsuka
patent: 4047219 (1977-09-01), Temple
patent: 4224634 (1980-09-01), Suedberg
patent: 4243997 (1981-01-01), Natori et al.
D. Hamilton et al., "Basic Integrated Circuit Engineering", .COPYRGT.1975 McGraw-Hill, Inc., pp. 14, 15.

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