Method of making a semiconductor device manufacturing mask...

Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask

Reexamination Certificate

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Details

C430S311000, C430S322000, C430S323000, C378S035000

Reexamination Certificate

active

11101396

ABSTRACT:
A method of making a semiconductor device manufacturing mask, which makes it possible to suppress a semiconductor-device global step and simply manufacture a highly reliable semiconductor device. Square dummy patterns each having one side of, for example, 0.25 μm or less are inserted into an area other than an actual pattern lying within a semiconductor device manufacturing mask to thereby uniformize a pattern density, enable etching processing without changing conditions set for every semiconductor device manufacturing mask an prevent an increase in global step of a post-CMP interlayer insulating film.

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patent: 6447960 (2002-09-01), Yamashita et al.
patent: 6884550 (2005-04-01), Morita
patent: 2001/0004122 (2001-06-01), Ito
patent: 08-160590 (1996-06-01), None
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patent: 09-311432 (1997-12-01), None
patent: 11-307426 (1999-11-01), None
patent: 2000-340568 (2000-12-01), None
patent: 2001-168205 (2001-06-01), None

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