Photomask having central and peripheral line patterns

Details Photomask having central and peripheral line patterns Photomask having central and peripheral line patterns

2007-09-04

2007-09-04

Rosasco, S. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

Reexamination Certificate

active

10802052

ABSTRACT:
Each of patterns on two types of photomasks, including identical central pattern portions, each having a line pattern on the center of a substrate, and peripheral pattern portions around the central pattern portions, and having distances between the central pattern portion and the peripheral pattern portion different from each other, is transferred onto a wafer. Thereafter, each line width of the transferred patterns corresponding to the line pattern of each photomask is measured. The difference between each of line widths is obtained, from which the flare rate is calculated.

REFERENCES:
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patent: 6921916 (2005-07-01), Adel et al.
patent: 6986973 (2006-01-01), Yao et al.
A. Bourov et al., “Impact of Flare on CD Variation for 248nm and 193nm Lithography Systems”,Proceedings of SPIE, vol. 4346 (2001), pp. 1388-1393, Rochester, NY.
E. Luce et al., “Flare impact on the intrafield CD control for sub-0.25 μm patterning”, Proceedings ofSPIE, vol. 3679, Mar. 1999, pp. 368-381, Santa Clara, CA.
D. Nam et al., “Effectiveness and Confirmation of Local Area Flare Measurement Method in Various Pattern Layouts”,Proceedings of SPIE, vol. 4691 (2002), pp. 57-66, Korea.
C. Progler et al., “Zernike Coefficients: Are they really enough?”,Proceedings of SPIE, vol. 4000 (2000), pp. 40-52,Hopewell Junction, NY.

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