Lateral bidirectional power FET with notched multi-channel stack

Details Lateral bidirectional power FET with notched multi-channel stack Lateral bidirectional power FET with notched multi-channel stack

1984-06-08

1986-11-11

Clawson, Jr., Joseph E.

357 238, 357 2314, 357 39, 357 55, 357 59, H01L 2978

Patent

active

046225692

ABSTRACT:
A lateral bidirectional power FET (2) has a common drift region (6) between first and second stacks (8, 10) of alternating conductivity type layers (12-17 and 18-23). A notch (38) extends vertically downwardly into the drift region and laterally separates the stacks above the drift region. The stacks include a plurality of channel-containing regions (12-14 and 18-20) interleaved with a plurality of source regions (15-17 and 21-23). In the ON state, bidirectional current flows serially through the source regions and channels of each stack and through the drift region. In the OFF state, voltage is dropped across the plurality of junctions in series in the stacks, and the respective junctions with the drift region.

REFERENCES:
patent: 4148047 (1979-04-01), Hendrickson

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