Metal working – Method of mechanical manufacture – Electrical device making
Reexamination Certificate
2007-07-31
2007-07-31
Kim, Paul D. (Department: 3729)
Metal working
Method of mechanical manufacture
Electrical device making
C029S592100, C029S612000, C204S192210, C257S321000, C338S195000, C338S320000, C374S185000
Reexamination Certificate
active
10796421
ABSTRACT:
There is provided a method and circuit for trimming a functional resistor on a thermally isolated micro-platform such that a second functional resistor on the same micro-platform remains substantially untrimmed; a method and circuit for providing and trimming a circuit such that at least two circuit elements of the circuit are subjected to a same operating environment and the operating environment is compensated for by distributing heat generated during operation of the circuit among the two circuit elements; a method and circuit for trimming a functional resistor on a thermally-isolated micro-platform such that a constant temperature distribution is obtained across the functional resistor; and a method and circuit for calculating a temperature coefficient of resistance of a functional resistor.
REFERENCES:
patent: 4210996 (1980-07-01), Amemiya et al.
patent: 4472239 (1984-09-01), Johnson et al.
patent: 4606781 (1986-08-01), Vyne
patent: 4683442 (1987-07-01), Vyne
patent: 4717886 (1988-01-01), Davis et al.
patent: 4782202 (1988-11-01), Sawae et al.
patent: 4870472 (1989-09-01), Vyne
patent: 4902959 (1990-02-01), Brokaw
patent: 5110758 (1992-05-01), Baskett
patent: 5460040 (1995-10-01), Tada et al.
patent: 5466484 (1995-11-01), Spraggins et al.
patent: 5493148 (1996-02-01), Ohata et al.
patent: 5563549 (1996-10-01), Shieh
patent: 5587097 (1996-12-01), Sato et al.
patent: 5635893 (1997-06-01), Spraggins et al.
patent: 5679275 (1997-10-01), Spraggins et al.
patent: 5742307 (1998-04-01), Watrobski et al.
patent: 5757264 (1998-05-01), Petit
patent: 5844122 (1998-12-01), Kato
patent: 6097276 (2000-08-01), Van Den Broek et al.
patent: 6184494 (2001-02-01), Isokoski et al.
patent: 6255185 (2001-07-01), Coolbaugh et al.
patent: 2002/0033519 (2002-03-01), Babcock et al.
patent: 1 275 967 (2003-01-01), None
patent: 03261564 (1991-11-01), None
patent: WO 00/21196 (2000-04-01), None
patent: WO03/023794 (2003-03-01), None
“Pulse current trimming of polysilicon resistors”; Feldbaumer, D.W.; Babcock, J.A.; Mercier, V.M.; Chun, C.K.Y.; Electron Devices, IEEE Transactions on vol. 42, Issue 4, Apr. 1995; pp. 689-696.
Pulse Current Trimming of Polysilicon Resistors, D.W. Feldbaumer et al., IEEE Transactions on Electron Devices, IEEE, N.Y., USA, vol. 42, N° 4, pp. 689-696.
Dopant Segregation in Polycrystalline Silicon, Mandurah et al., Journal Appl. Phys. 51(11), Nov. 1980, pp. 5755-5763.
Spin-on Nanoparticle Tin Oxide for Microhotplate Gas Sensors, R. E. Cavicchi et al. Sensor and Actuators B. Elsevier Sequoia, S.A. Lausanne, CH, vol. 77, No. 1-2, Jun. 15, 2001, pp. 145-154.
A characterization of the Thermal Parameters of Thermally Driven Polysilicon Microbridge Actuators Using Electrical Impedanc Analysis, Jae-Youl Lee et al., Sensors and Actuators A., Elsevier Sequoia S.A., Lausanne, CH. vol. 75, No. 1, May 4, 1999, pp. 86-92.
Fabrication of Thermal-Isolation Structure for Microheater Elements Applicable to Fingerprint Sensors, Hans Ji-Song et al., Sensors and Actuators A., Elsevier Sequoia S.A., Lausanne, CH, vol. 100, No. 1, Aug. 15, 2002, pp. 114-122.
Constant Voltage Trimming of Heavily Doped Polysilicon Resistors, Japan Journal Appl. Phys. vol. 34, Part 1, No. 1, Jan. 1995, pp. 48-53.
Pulse Current Trimming of Polysilicon Resistors, Transactions of Electron Devices, IEEE, vol. 42, N° 4, Apr. 1995, pp. 689-695.
Change in Temperature Coefficient of Resistance of Heavily Doped Polysilicon Resistors Caused by Electrical Trimming, Japan Journal Appl. Phys, vol. 35, Part 1, No. 8, Aug. 1995, pp. 4209-4215.
Theory and Application of Polysilicon Resistor Trimming, Solid-State Electronics, vol. 38, N° 11, 1995, pp. 1861-1869.
Electrical Trimming of Ion-Beam Sputtered Polysilicon Resistors by High Current Pulses, IEEE Transactions on Electron Devices, vol. 41, No. 8, Aug. 1994, pp. 1429-1434.
Electrical Trimming of Heavily Doped Polycrystalline Silicon Resistors, IEEE Transactions on Electron Devices, Vo. ED-26, No. 11, Nov. 1979, pp. 738-742.
A Monolithic 14Bit D/A Converter Fabricated with a New Trimming Technique (DOT), IEEE, Journal of Solid-State Circuits, vol. SC-19, N° 5, Oct. 1984, pp. 802-807.
Precision Electrical Trimming of Very Low TCR Poly-SiGe Resistors, IEEE Electron Device Letters, Bol. 21, No. 6, Jun. 2000, pp. 283-286.
1/f Noise Transformation that Accompanies the Trimming of Polycrystalline Silicon Layers, Solid State Phenomena, vols. 51-52 (1996) Scitec Publications, Switzerland, pp. 391-396.
Micromachined Thermal Radiation Emitter from a Commercial CMOS Process,IEEE Electron Devices Letters, vol. 12, No. 2, Feb. 1991, pp. 57-59.
CMOS-Compatible High-Temperature Micro-Heater: Microstructure Release and Testing, Can. J. Elect & Comp. Eng., vol. 25, No. 1, Jan. 2000, pp. 002-006.
Reliability Study of Polysilicon for Microhotplates, 1994, Dept. of Electrical and Computer Engineering, N.R. Swart et al., University of Waterloo, Waterloo, Ont. CANADA, pp. 119-122.
CMOS Thermally Isolated Heater Structure as a Substrate for Semiconductor Gas Sensors, S. Wessel et al, Energy Research Institute, pp. 1.6.1 to 1.6.8.
A Microstructure for Measurement of Thermal Conductivity of Polysilicon Thin Films, Friedemann Völklein et al., Jour. of Microelectromechanical Systems, vol. 1, N° 4, Dec. 1992, pp. 193-196.
Electrical and Optical Characteristics of Vacuum-Sealed Polysilicon Microlamps, Carlos H. Mastrangelo et al., IEEE Transactions on Electron Devices, vol. 39, N° 6, Jun. 1992, pp. 1363-1374.
Frolov Gennadiy
Grudin Oleg
Landsberger Leslie M.
Kim Paul D.
Microbridge Technologies Inc.
Ogilvy Renault LLP
LandOfFree
Method for trimming resistors does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for trimming resistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for trimming resistors will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3795393