Method of fabricating crystalline silicon and switching...

Details Method of fabricating crystalline silicon and switching... Method of fabricating crystalline silicon and switching...

2007-04-17

2007-04-17

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S166000, C257S064000, C257S797000

Reexamination Certificate

active

10878117

ABSTRACT:
A method of forming a crystalline silicon layer that includes forming a semiconductor layer of amorphous silicon on a substrate having a first region and a second region at a periphery of the first region; forming at least one concave-shaped alignment key by irradiating a laser beam onto the semiconductor layer in the second region; and crystallizing the semiconductor layer in the first region using the at least one alignment key.

REFERENCES:
patent: 6713328 (2004-03-01), Dai et al.
patent: 6943086 (2005-09-01), Hongo et al.
patent: 2003/0068836 (2003-04-01), Hongo et al.
patent: 2002-151407 (2002-05-01), None
patent: 2003-257862 (2003-09-01), None
Robert S. Sposilli, et al., Material Research Society Symp. Proc. vol. 452, pp. 956-957, 1997.

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