Semiconductor device having a discharge-formed insulating film

Details Semiconductor device having a discharge-formed insulating film Semiconductor device having a discharge-formed insulating film

1976-03-26

1978-10-17

Larkins, William D.

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

357 54, 357 59, 357 71, 357 23, 204192S, H01L 2934, H01L 2904, H01L 2946

Patent

active

041212401

ABSTRACT:
A semiconductor device comprises a semiconductor chip including a conductive layer thereon, a film of Si disposed on the surface of the chip, and an insulating film of SiO.sub.2 disposed on said Si film, which is formed by a sputtering or a glow discharge method.

REFERENCES:
patent: 3585461 (1971-06-01), Eynon et al.
patent: 3611070 (1971-10-01), Engeler
patent: 3827949 (1974-08-01), Platter et al.
patent: 3881971 (1975-05-01), Greer et al.
patent: 3996657 (1976-12-01), Simko et al.
patent: 4009483 (1977-02-01), Clark
patent: 4040083 (1977-08-01), Saiki et al.
Grosewald et al. "Reducing Radiation Damage in Insulated-Gate Field-Effect Transistors" IBM Tech. Disclosure Bulletin, vol. 14 (8/71), pp. 811-812.
Harding et al. "Universal Monolithic Circuit and Method of Fabrication" IBM Tech. Disclosure Bulletin, vol. 8 (10/65), pp. 804-805.

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