Near-infrared visible light photon counter

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Light responsive structure

Reexamination Certificate

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Details

C257S010000, C257S011000, C257S021000, C257S053000, C257S054000, C257S055000, C257S056000, C257S113000, C257S184000, C257S185000, C257S188000, C257S189000, C257S225000, C257S227000, C257S257000, C257S258000, C257S290000, C257S291000, C257S414000, C257S431000, C257S432000, C257S461000, C257S462000, C257S463000, C257S464000, C257S749000

Reexamination Certificate

active

10920537

ABSTRACT:
Electromagnetic energy is detected with high efficiency in the spectral range having wavelengths of about 1–2 microns by coupling an absorber layer having high quantum efficiency in the spectral range having wavelengths of about 1–2 microns to an intrinsic semiconducting blocking region of an impurity band semiconducting device included in a solid state photon detector.

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