Light-emitting diode with openings formed in a stacked...

Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With reflector – opaque mask – or optical element integral...

Reexamination Certificate

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C257S097000

Reexamination Certificate

active

11259785

ABSTRACT:
A light-emitting diode has a sub-mount, a first conductivity type substrate deposed on the sub-mount, a reflector layer deposed between the sub-mount and the first conductivity type substrate, a first conductivity type buffer layer deposed on the first conductivity type substrate, a first conductivity type distributed Bragg reflector (DBR) layer deposed on the first conductivity type buffer layer, an illuminant epitaxial structure deposed on the first conductivity type distributed Bragg reflector layer, and a second conductivity type window layer deposed on the illuminant epitaxial structure.

REFERENCES:
patent: 5376580 (1994-12-01), Kish et al.
patent: 5498883 (1996-03-01), Lebby et al.
patent: 5717226 (1998-02-01), Lee et al.
patent: 6958494 (2005-10-01), Lin et al.
patent: 2001/0011730 (2001-08-01), Saeki
patent: 2002/0123164 (2002-09-01), Slater et al.
patent: 2003/0179978 (2003-09-01), Iwasaki

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