Multiple doped channel in a multiple doped gate junction...

Details Multiple doped channel in a multiple doped gate junction... Multiple doped channel in a multiple doped gate junction...

2007-05-01

2007-05-01

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S264000, C257S285000

Reexamination Certificate

active

11110507

ABSTRACT:
A multiple doped channel in a multiple doped gate junction field effect transistor. In accordance with a first embodiment of the present invention, a junction field effect transistor (JFET) circuit structure comprises a vertical channel. The vertical channel comprises multiple doping regions. The vertical channel may comprise a first region for enhancement mode operation and a second region for depletion mode operation.

REFERENCES:
patent: 5714777 (1998-02-01), Ismail et al.
patent: 6777722 (2004-08-01), Yu et al.
patent: 2005/0029557 (2005-02-01), Hatakeyama et al.

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