Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-05-08
2007-05-08
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S565000
Reexamination Certificate
active
11070229
ABSTRACT:
A bipolar type semiconductor device capable of attaining high current gain and high cut-off frequency and performing a satisfactory transistor operation also in a high current region while maintaining a high breakdown voltage performance, as well as a method of manufacturing the semiconductor device, are provided. In a collector comprising a first semiconductor layer and a second semiconductor layer narrower in band gap than the first semiconductor layer, an impurity is doped so as to have a peak of impurity concentration within the second collector layer and so that the value of the peak is higher than the impurity concentration at any position within the first collector layer. It is preferable to adjust the concentration of the doped impurity in such a manner that a collector-base depletion layer extends up to the first collector layer.
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patent: 5962880 (1999-10-01), Oda et al.
patent: 2005/0236647 (2005-10-01), Khater
patent: 07-147287 (1995-06-01), None
patent: 10-079394 (1998-03-01), None
patent: 2002-359249 (2002-12-01), None
Miura Makoto
Shimamoto Hiromi
Washio Katsuyoshi
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