Methods of forming semiconductor-on-insulator constructions

Details Methods of forming semiconductor-on-insulator constructions Methods of forming semiconductor-on-insulator constructions

2007-09-25

2007-09-25

Fourson, George R. (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S406000, C438S459000, C438S479000, C257SE21122, C257SE21567, C257SE21569

Reexamination Certificate

active

11218201

ABSTRACT:
The invention encompasses a method of forming a semiconductor-on-insulator construction. A substrate is provided. The substrate includes a semiconductor-containing layer over an insulative mass. The insulative mass comprises silicon dioxide. A band of material is formed within the insulative mass. The material comprises one or more of nitrogen argon, fluorine, bromine, chlorine, iodine and germanium.

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