Wafer grinding method

Details Wafer grinding method Wafer grinding method

2007-05-01

2007-05-01

Shakeri, Hadi (Department: 3723)

Abrading

Abrading process

With critical nonabrading work treating

C438S462000, C438S464000

Reexamination Certificate

active

10816559

ABSTRACT:
Methods for grinding low-K interlayer dielectric (ILD) wafers are described herein. In various embodiments, the method may include cutting and severing a semiconductor wafer into a plurality of portions, the cutting and severing being performed in a manner that allows the portions to remain disposed with each other as if the semiconductor wafer had not been cut, applying a tape to a front side of the as if uncut semiconductor wafer, and grinding a backside of the taped as if uncut semiconductor wafer. In various other embodiments, the method may include attaching an adhesive to a backside of the semiconductor wafer prior to cutting the semiconductor wafer along the streets of the semiconductor wafer with the scribed lines to cut and sever the semiconductor wafer into a plurality of portions, with the portions remaining proximally disposed to each other and held in place by the adhesive as if the semiconductor device had not been cut.

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