Method for depositing a film using a charged particle beam,...

Details Method for depositing a film using a charged particle beam,... Method for depositing a film using a charged particle beam,...

2007-07-10

2007-07-10

Nguyen, Kiet T. (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

Reexamination Certificate

active

10873170

ABSTRACT:
Certain film deposition and selective etching technology may involve scanning of a charged particle beam along with a deposition gas and etching gas, respectively. In conventional methods, unfortunately, the deposition rate or the selective ratio is oftentimes decreased depending on optical system setting, scan spacing, dwell time, loop time, substrate, etc. Accordingly, an apparatus is provided for finding an optical system setting, a dwell time, and a scan spacing. These parameters are found to realize the optimal scanning method of the charged particle beam from the loop time dependence of the deposition rate or etching rate. This deposition rate or etching rate are measurements stored in advance for a desired irradiation region where film deposition or selective etching should be performed. The apparatus displays a result of its judgment on a display device.

REFERENCES:
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patent: 8-298243 (1995-04-01), None
patent: 9-120153 (1996-09-01), None
patent: 2000-29201 (1998-07-01), None

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