Fluent material handling – with receiver or receiver coacting mea – Processes – Gas or variation of gaseous condition in receiver
Patent
1991-07-10
1992-08-25
Cusick, Ernest G.
Fluent material handling, with receiver or receiver coacting mea
Processes
Gas or variation of gaseous condition in receiver
141 1, 141 9, 156 99, G09F 900, G09F 113, G09F 100, B67D 537
Patent
active
051410362
ABSTRACT:
A method for manufacturing a liquid crystal device in which a pair of substrates are placed in a vacuum chamber, with at least one inlet port provided for communicating with an inner space between the pair of substrates. The vacuum chamber is evacuated and a material including liquid crystals is supplied to the inlet port. The pressure of the chamber is then elevated such that the liquid crystal and other materials are introduced into the space between the pair of substrates by the use of differential pressure between the inside and outside of the space between the substrates. The material including the liquid crystals is maintained at a sufficiently high temperature such that the liquid crystals exhibit isotropic phases.
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Mase Akira
Osabe Akio
Sakayori Hiroyuki
Sato Masahiko
Watanabe Toshio
Cusick Ernest G.
Semiconductor Energy Laboratory Co,. Ltd.
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