Semiconductor laser device and method for fabricating the same

Details Semiconductor laser device and method for fabricating the same Semiconductor laser device and method for fabricating the same

2007-05-08

2007-05-08

Harvey, Minsun Oh (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S043010

Reexamination Certificate

active

10665469

ABSTRACT:
A semiconductor laser device has an active layer, a first cladding layer formed on the active layer, and a second cladding layer formed on the first cladding layer. The first cladding layer is doped with magnesium as a first impurity to have a high resistivity. The second cladding layer is doped with zinc as a second impurity to have a resistivity lower than the resistivity of the first cladding layer.

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