Processing apparatus and cleaning method

Details Processing apparatus and cleaning method Processing apparatus and cleaning method

2007-04-10

2007-04-10

Barr, Michael (Department: 1746)

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

C134S022100, C156S345240, C156S345250, C438S905000

Reexamination Certificate

active

10344043

ABSTRACT:
In a chamber (11), a SiOF film is formed on a wafer W using a plasma CVD method. A film remaining inside the chamber (11) is cleaned up using a gas containing NF3. A manometer (28) is prepared for the chamber (11). An end point of cleaning of the chamber (11) is detected by monitoring the pressure inside the chamber (11).

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