Structure and manufacturing of gallium nitride light...

Details Structure and manufacturing of gallium nitride light... Structure and manufacturing of gallium nitride light...

2007-04-24

2007-04-24

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S085000, C257S090000, C257S094000, C257S096000, C257S097000, C257S099000, C257S101000, C257S102000, C257S103000, C257S201000, C257S918000

Reexamination Certificate

active

10840267

ABSTRACT:
A structure of a gallium nitride light emitting diode has a transparent conductive window layer including a diffusion barrier layer, an ohmic contact layer, and a window layer. By using the added domain contact layer, the diffusion barrier layer and the P-type semiconductor layer of the light emitting diode are put into ohmic contact. And then, the rising of the contact resistivity is barred by applying the diffusion barrier layer to block the diffusion of the window layer from the contact with the domain contact layer so as to lower down the operating voltage and advance the transparency.

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