Semiconductor injection laser

Details Semiconductor injection laser Semiconductor injection laser

1977-01-03

1978-10-17

Miller, Jr., Stanley D.

Oscillators

Molecular or particle resonant type

357 18, H01S 319

Patent

active

041211790

ABSTRACT:
A semiconductor injection laser device has a heterostructure wherein either of a p-layer and an n-layer which hold a lasing active layer therebetween is a semiconductor layer which has an energy band gap greater than that of the active layer, and the semiconductor injection laser device includes one of the semiconductor layers that adjoins the active layer being constructed of a semiconductor layer which has a stripe mesa portion and whose base part is 0.8.mu. to 1.5.mu. thick. The semiconductor injection laser device of this construction has a current injection region width limited by the width of the stripe mesa portion. As a result, not only a current flowing into the device can be made small, but also the device can be lased in a single mode of the lowest order with transverse modes of higher orders reduced.

REFERENCES:
patent: 3983510 (1976-09-01), Hayashi et al.

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