Semiconductor luminescent device and manufacturing method...

Details Semiconductor luminescent device and manufacturing method... Semiconductor luminescent device and manufacturing method...

2007-04-10

2007-04-10

Tran, Minhloan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With particular dopant material

C257S079000, C257SE33010

Reexamination Certificate

active

11249644

ABSTRACT:
A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.

REFERENCES:
patent: 6008539 (1999-12-01), Shibata et al.
patent: 6992331 (2006-01-01), Hon et al.
patent: 7071490 (2006-07-01), Edmond et al.
patent: 2004/0094772 (2004-05-01), Hon et al.
patent: 06-314822 (1994-08-01), None
Office Action issued on Sep. 26, 2006, on the counterpart Taiwanese Patent Application No. 094135822. Total of 6 pages.

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