Pressure-contact type semiconductor device

Details Pressure-contact type semiconductor device Pressure-contact type semiconductor device

2007-05-22

2007-05-22

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With large area flexible electrodes in press contact with...

C257S659000, C257S687000, C257S785000

Reexamination Certificate

active

11241991

ABSTRACT:
A gate electrode (1a) is formed on the outer peripheral step portion (1′) of a semiconductor substrate (1) so as to face a pressure-contact supporting block (6), and a convex contacting portion (1g) is formed on a predetermined position on the surface of the gate electrode to contact the pressure contact supporting block. The surface area of the gate electrode ranging from the inner periphery to a position adjacent to the convex contacting portion, is coated with an insulation film (1d). The convex contacting portion (1g) is formed of a convex portion integral with the gate electrode or formed of another gate electrode (1a′).

REFERENCES:
patent: 0 746 021 (1996-12-01), None
patent: 8-330572 (1996-12-01), None

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