Organic field effect transistor with a photostructured gate...

Details Organic field effect transistor with a photostructured gate... Organic field effect transistor with a photostructured gate...

2007-07-03

2007-07-03

Hu, Shouxiang (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S410000, C438S082000, C438S099000, C438S780000

Reexamination Certificate

active

10467636

ABSTRACT:
The invention relates to an organic field effect transistor which is especially characterized by a cross-linked, structured insulating layer (4) on which the gate electrode (5) is arranged. The structure of the OFET ensures that the gate electrode (5) of an OFET can be used as a strip conductor to the source electrode (2) of the next transistor and can be used in the construction of larger circuits.

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