Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – Active layer of indirect band gap semiconductor
Reexamination Certificate
2007-09-25
2007-09-25
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
Active layer of indirect band gap semiconductor
C257S086000, C257S094000
Reexamination Certificate
active
10297115
ABSTRACT:
An electronic or optoelectronic device fabricated from a crystalline material in which a parameter of a bandgap characteristic of said crystalline material has been modified locally by introducing distortions on an atomic scale in the lattice structure of said crystalline material and the electronic and/or optoelectronic parameters of said device are dependent on the modification of said bandgap is exemplified by a radiation emissive optoelectronic semiconductor device which comprises a junction (10) formed from a p-type layer (11) and an n-type layer (12), both formed from indirect bandgap semiconductor material. The p-type layer (11) contains an array of dislocation loops which create a strain field to confine spatially and promote radiative recombination of the charge carriers.
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Declaration of Kevin Homewood dated May 31, 2006.
References attached to Declaration of Kevin Homewood dated May 31, 2006: (Reference 1, Extract from D.B. Williams and C B Carter, Transmission Electron Microscopy, Plenum Press 1996; Reference 2, Optical fibre communications: Principles and Practice, John M. Senior, 1951, pp. 62-64; Reference 3, Optoelectronics: an introduction, J. (John) Wilson, 1939, pp. 281, 315-317; Reference 4, Curriculum Vitae of Kevin Peter Homewood, 6 pp.; Reference 5. Refereed Journal Publication List, Invited Conference Presentations, Kevin P. Homewood, 12 pp.).
Jasper et al., “The effect of implantation, energy and dose on extended defect formation for MeV phosphorus implanted silicon,” Applied Physics Letters, Oct. 25, 1999, pp. 2629-2631, vol. 75, No. 17, American Institute of Physics.
Gwilliam Russell Mark
Homewood Kevin Peter
Shao Guosheng
Leydig , Voit & Mayer, Ltd.
Nadav Ori
University of Surrey
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