Semiconductor device having multilayered wiring structure

Details Semiconductor device having multilayered wiring structure Semiconductor device having multilayered wiring structure

1997-07-17

1998-08-25

Arroyo, Teresa Maria

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257750, 257753, 257770, H01L 2348, H01L 2352, H01L 2940

Patent

active

057985693

ABSTRACT:
In a semiconductor device having a metal wiring conductor connected to a contact hole formed through an interlayer insulator layer formed on a lower level circuit, a lower level tungsten film is deposited under a condition giving an excellent step coverage so as to fill the contact hole, and an upper level tungsten film is further deposited under a condition of forming a film having a stress smaller than that of the lower level tungsten film. The metal wiring conductor is formed of a double layer which is composed of the lower level tungsten film and the upper level tungsten film, and therefore, has a reduced stress in the whole of the film. Thus, there is obtained the tungsten film wiring conductor which fills the inside of the contact hole with no void and therefore has a high reliability, and which has a low film stress. In addition, the number of steps in the manufacturing process can be reduced.

REFERENCES:
patent: 4924295 (1990-05-01), Kuecher
patent: 5182231 (1993-01-01), Hongo et al.
patent: 5557147 (1996-09-01), Sugiura et al.
patent: 5631479 (1997-05-01), Shiga

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