Spin-on glass composition and method of forming silicon...

Details Spin-on glass composition and method of forming silicon... Spin-on glass composition and method of forming silicon...

2007-09-18

2007-09-18

Feely, Michael J. (Department: 1712)

Stock material or miscellaneous articles

Composite

Of silicon containing

C438S760000, C438S782000, C438S790000, C524S580000

Reexamination Certificate

active

10861517

ABSTRACT:
A spin-on glass (SOG) composition and a method of forming a silicon oxide layer utilizing the SOG composition are disclosed. The method includes coating on a semiconductor substrate having a surface discontinuity, an SOG composition containing polysilazane having a compound of the formula —(SiH2NH)n— wherein n represents a positive integer, a weight average molecular weight within the range of about 3,300 to 3,700 to form a planar SOG layer. The SOG layer is converted to a silicon oxide layer with a planar surface by curing the SOG layer. Also disclosed is a semiconductor device made by the method.

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Machine translation of JP 08-269399, provided by the JPO website.
Office Action dated Nov. 7, 2005 for counterpart Korean application.

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