Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2007-05-15
2007-05-15
Hiteshew, Felisa (Department: 1722)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S089000, C117S093000, C117S095000
Reexamination Certificate
active
10466761
ABSTRACT:
The invention relates to a method for producing an X-ray detector for imaging. By increasing the epitaxial layers, a GaAs material (1) is placed on a substrate n<+> (or p<+>) (2). p<+> (or n<+>)< >ions are then implanted on the external face (11) of the material (1) in order to form a p<+>/i
<+> structure after annealing. Ohmic contacts (12) are subsequently disposed on the two faces and individual detectors (pixels) (13) are produced over the entire surface using means of dry or chemical masking and pickling. The epitaxial material (1) has a thickness d′ that is sufficient to absorb effectively the X photons and means can be used to reduce the residual doping of said material (1). The material obtained in this way is suitable for medical (mammography, dental, etc.) and industrial imaging.
REFERENCES:
patent: 5725659 (1998-03-01), Sepehry-Ford et al.
patent: 5733815 (1998-03-01), Ashkinazi et al.
A. Owens, M. Bazdaz, S. Kraft, A. Peacock, S. Nenonen, H. Andersson, “The Hard X-Ray Response of Epitaxial GaAs Dectors,” Nuclear Instruments & Methods in Physics Research, vol. 442, No. 1-3, Mar. 2000.
R.L. Bates, S. Manolopoulos, K. Mathieson, S. Meikle, V. O'Shea, C. Raine, K.M. Smith, J. Watt, C. Whitehill, S. Pospisil, I. Wilhelm, Z. Dolezal, H. Juergensen, M. Heuken, “Development of Low-Pressure Vapour-Phase Epitaxial GaAs for Medical Imaging,” NI&MPR, vol. 434, No. 1, Sep. 1999.
Arent & Fox LLP
Hiteshew Felisa
Universite Pierre et Marie Curie
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