Method for forming device isolation film of semiconductor...

Details Method for forming device isolation film of semiconductor... Method for forming device isolation film of semiconductor...

2007-03-06

2007-03-06

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S503000, C257SE21562

Reexamination Certificate

active

10998963

ABSTRACT:
A method for forming device isolation film of semiconductor device is provided, the method including forming a pad oxide film, a pad nitride film, and an oxide film for device isolation on a semiconductor substrate, etching a predetermined region of the oxide film for device isolation, the pad nitride film, the pad oxide film, and the semiconductor substrate to form a trench, forming a SEG silicon layer in the trench to form an active region, and forming a gap-fill insulating film on the resulting structure having a gap between sidewalls of the trench and the SEG silicon layer.

REFERENCES:
patent: 6103594 (2000-08-01), See et al.
patent: 6887788 (2005-05-01), Cho et al.
patent: 2003/0199149 (2003-10-01), Lee et al.

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