Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-09-25
2007-09-25
Smoot, Stephen W. (Department: 2813)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C257SE21546
Reexamination Certificate
active
11038927
ABSTRACT:
A semiconductor device having a trench element separation region is disclosed. A pad oxide film (2), and a silicon nitride film (3) may be formed on a semiconductor substrate (1). A trench (4) may be formed by dry etching using the silicon nitride film (3) as a mask. The silicon substrate (1) may be thermally oxidized using the silicon nitride film (3) as an oxidation mask and a modified layer may be formed on the surface of the silicon nitride film (3). The modified layer may be removed by a neutral radical containing fluorine. The surface of the silicon nitride film (3) may be etched by a predetermined thickness. A filling insulation film may be deposited to completely fill the trench (4). The insulation film may then be chemical mechanical polished using the silicon nitride film (3a) as a polishing stopper to form a trench element separation insulation material (8).
REFERENCES:
patent: 6258697 (2001-07-01), Bhakta et al.
patent: 2000223564 (2000-08-01), None
Takeshi Yamazaki, “Manufacture of Semiconductor Device,” JPO, English Translation of JP 2000223564 A, Aug. 2000.
Elpida Memory Inc.
Smoot Stephen W.
Walker Darryl G.
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