Method for fabricating a substrate with useful layer on high...

Details Method for fabricating a substrate with useful layer on high... Method for fabricating a substrate with useful layer on high...

2007-09-11

2007-09-11

Richards, N. Drew (Department: 2815)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C438S455000, C438S459000

Reexamination Certificate

active

10968695

ABSTRACT:
A method for fabricating a substrate containing a useful semiconductor layer on a support having high resistivity by: preparing a base substrate of a semiconductor material containing a controlled quantity of interstitial oxygen, heat treating the base substrate to achieve at least partial precipitation of the interstitial oxygen therein, removing a superficial layer over a controlled depth from a surface of the base substrate that intended to receive a useful layer, forming the useful layer on the surface of the base substrate, with the base substrate serving as a support for the useful layer. This method is applicable in particular to SOI substrates having high resistivity for use in forming high frequency electronic circuits.

REFERENCES:
patent: 6544656 (2003-04-01), Abe et al.
patent: 2001/0055859 (2001-12-01), Yamada et al.
patent: 1 087 041 (2001-03-01), None
patent: 1 168 428 (2002-01-01), None
patent: 08-293589 (1996-11-01), None
patent: 2000-031439 (2000-01-01), None
patent: WO 0055397 (2000-09-01), None

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