Method of manufacturing a semiconductor device having an insulat

Details Method of manufacturing a semiconductor device having an insulat Method of manufacturing a semiconductor device having an insulat

1975-02-26

1976-12-07

Lovell, C.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, H01L 2122

Patent

active

039960773

ABSTRACT:
A method of manufacturing a semiconductor device, comprising the steps of providing a semiconductor body comprising a first surface and an underlying semiconductor portion that is of first conductivity type, providing a doping material of said first conductivity type at a first portion of said first surface prior to the formation of a sunken insulating layer, said first portion being situated beside said sunken insulation layer, forming an insulation layer consisting of insulating material and sunk locally in said body from said first surface, and then introducing said doping material into said semiconductor body via said first portion of said first surface so as to form a zone of said first conductivity type, said zone contacting said underlying semiconductor portion, and zone extending at the area of contact to a depth greater than that of said sunken insulation layer.

REFERENCES:
patent: 3640806 (1972-02-01), Watanabe et al.
patent: 3648125 (1972-03-01), Peltzer
patent: 3796613 (1974-03-01), Magdo et al.
patent: 3873989 (1975-03-01), Schinella et al.
Magdo et al. "Dielectrically Isolated Transistor," I.B.M. Tech. Disc. Bull. vol. 13, No. 11, Apr. 1971, p. 3238.

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