Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With specified electrode means
Patent
1996-10-15
1998-08-25
Saadat, Mahshid D.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With specified electrode means
257580, 257581, 257587, 257588, 257592, H01L 27082, H01L 27102, H01L 2970, H01L 3111
Patent
active
057985618
ABSTRACT:
A semiconductor device including a bipolar transistor is provided, which can reduce the base resistance of the transistor. This device includes a semiconductor base region having a first semiconductor active region of a first conductivity type in its inside. A first insulating layer is formed on the main surface of the substructure to cover the first active region. The first insulating layer has a first penetrating window exposing the first active region. A semiconductor contact region of a second conductivity type is formed on the first insulating layer. The contact region has an overhanging part which overhangs the first window. The second window is defined by the inner end of the overhanging part to be entirely overlapped with the first window. The contact region is made of a polycrystalline semiconductor. A second semiconductor active region of the second conductivity type is formed on the first active region in the first window. A semiconductor connection region of the second conductivity type is formed in the first window to surround the second active region. The connection region is contacted with the overhanging part of the contact region and the second active region, thereby electrically interconnecting the second active region with the contact region. The connection region is made of a polycrystalline semiconductor.
REFERENCES:
patent: 5374846 (1994-12-01), Takemura
patent: 5494836 (1996-02-01), Imai
patent: 5504018 (1996-04-01), Sato
patent: 5506427 (1996-04-01), Imai
patent: 5548155 (1996-08-01), Yoshihara
Aoyama et al; Selective Polysilicon Deposition (SPD) by Hot-Wall LPCVD and Its Application to High Speed Bipolar Devices; 1990; pp. 665-668; Conference on Solid State Devices and Materials, Sendai.
NEC Corporation
Saadat Mahshid D.
Wilson Allan R.
LandOfFree
Bipolar transistor with polysilicon base does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Bipolar transistor with polysilicon base, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Bipolar transistor with polysilicon base will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-37729