Method for fabricating a thin film resistor

Details Method for fabricating a thin film resistor Method for fabricating a thin film resistor

2007-05-01

2007-05-01

Reichard, Dean A. (Department: 2831)

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

C361S303000, C361S311000, C361S301400, C361S306100, C361S310000, C361S328000

Reexamination Certificate

active

10072339

ABSTRACT:
A method of fabricating high resistivity thin film resistors. An isolation region is formed on a substrate to isolate the active regions. A polysilicon layer is formed above the substrate. A diffusion barrier layer is formed above the polysilicon layer. Lightly doped ions are implanted in the polysilicon layer. The substrate is annealed at a high temperature. The diffusion barrier layer and the polysilicon layer are patterned to form a high-resistive thin film resistor. Spacers are formed on the sidewalls of the high-resistive thin film resistor.

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