Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-01-09
2007-01-09
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C156S345100, C134S001100, C134S001200
Reexamination Certificate
active
10361823
ABSTRACT:
A method for preventing the deterioration of an electrode caused by the build up of deposits in openings of the electrode. Gas is supplied to each of the openings in order to prevent deposits from adhering to the openings before or after the etching treatment.
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NEC Corp. [NIDE], Dry etching apparatus . . . to form plasma of cleaning gas supplied through holes chamber, by electrodes, Sep. 7, 2001, Computer-generated, English Abstract of JP 2001244239 A, 3 pages.
NEC Corp. [NIDE], Dry etching apparatus . . . to form plasma of cleaning gas supplied through holes chamber, by electrodes, Sep. 7, 2001, Computer-generated, English translation of JP 2001244239 A, 8 pages.
Norton Nadine
Oki Electric Industry Co. Ltd.
Umez-Eronini Lynette T.
VolentineFrancos&Whitt,PLLC
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