Method of planarizing a surface

Details Method of planarizing a surface Method of planarizing a surface

2007-09-04

2007-09-04

Olsen, Allan (Department: 1763)

Etching a substrate: processes

Mechanically shaping, deforming, or abrading of substrate

C216S013000, C216S038000, C216S092000, C216S100000, C252S079100, C451S036000

Reexamination Certificate

active

10919912

ABSTRACT:
A method for removing at least a portion of a structure, such as a layer, film, or deposit, including ruthenium metal and/or ruthenium dioxide includes contacting the structure with a material including ceric ammonium nitrate. A material for removing ruthenium metal and amorphous ruthenium dioxide includes ceric ammonium nitrate and may be in the form of an aqueous solution including ceric ammonium nitrate and, optionally, other solid or liquid solutes providing desired properties. In one application, the method and material may be utilized to etch, shape, or pattern layers or films of ruthenium metal and/or ruthenium dioxide in the fabrication of semiconductor systems and their elements, components, and devices, such as wires, electrical contacts, word lines, bit lines, interconnects, vias, electrodes, capacitors, transistors, diodes, and memory devices.

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