Semiconductor storage

Details Semiconductor storage Semiconductor storage

2007-03-06

2007-03-06

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185180, C365S185140, C365S185050

Reexamination Certificate

active

10506322

ABSTRACT:
A semiconductor storage device includes a semiconductor substrate, a gate insulating film formed on the semiconductor substrate, a single gate electrode formed on the gate insulating film, two charge holding portions formed on both sides of the gate electrode, source/drain regions respectively corresponding to the charge holding portions, and a channel region disposed under the single gate electrode. A memory function implemented by these two charge holding portions and a transistor operation function implemented by the gate insulating film is separated from each other for securing sufficient memory function as well as easily suppressing short channel effect by making the gate insulating film thinner.

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