Thin film formation apparatus

Details Thin film formation apparatus Thin film formation apparatus

1994-02-23

1996-06-04

Breneman, R. Bruce

Coating apparatus

Gas or vapor deposition

With treating means

118723MW, 118723ME, 118723E, 20429807, C23C 1600

Patent

active

055223435

ABSTRACT:
The present invention relates to relates to a hydrogenated amorphous silicon carbide used as the surface protecting layer of the photosensitive member for electrohotographic apparatus. In view of not allowing generation of blurring of photosensitive member under the high humidity atmosphere, the content (x) of carbon in the hydrogenated amorphous silicon carbide expressed by the general formula a-Si.sub.1-x C.sub.x :H is in the range of 0.4.ltoreq.x.ltoreq.0.8 and a ratio (TO/TA) of the peak (TO) amlitude appearing in the vicinity of 480 cm.sup.-1 and the peak (TA) amplitude appearing in the vicinity of 150 cm.sup.-1 observed by the laser Raman spectroscopy measurement using the excitation laser of Ar.sup.+ 488 is set to 2.0 or higher.

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