Method for determining programming voltage of nonvolatile...

Details Method for determining programming voltage of nonvolatile... Method for determining programming voltage of nonvolatile...

2007-04-10

2007-04-10

Dinh, Son (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185280

Reexamination Certificate

active

11251059

ABSTRACT:
A method for determining programming voltage of a nonvolatile memory in which any variation in the threshold voltage at the memory cell after programming by hot carrier injection can be suppressed includes the steps of: setting the drain voltage to an initial setting level; applying the drain voltage and a gate voltage at a predetermined programming time; shifting the drain voltage to another setting level; reprogramming the memory cell with the another setting level of the drain voltage; measuring the threshold voltage of the memory cell; and determining a differential represented by a ratio of a change in the threshold voltage to a change in the drain voltage at the threshold voltage after the reprogramming, whereby when the determined differential and the measured threshold voltage remain within their respective permissible ranges, the setting determined by the shifting step is defined as an optimum level of the drain voltage.

REFERENCES:
patent: 5402370 (1995-03-01), Fazio et al.
patent: 2005/0105337 (2005-05-01), Cohen et al.
patent: 9-502828 (1997-03-01), None
Mukherjee, S. et al. (1985). “A Single Transistor EEPROM Cell and its Implementation in a 512K CMOS EEPROM,”IEDM Technical Digest85:616-619.

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