Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2007-09-04
2007-09-04
Ngô, Ngân V. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S565000, C257SE29033
Reexamination Certificate
active
11446245
ABSTRACT:
Some spin tunnel transistors with a larger current transmittance and a higher MR ratio are described.One of the spin tunnel transistor comprises a collector; an emitter; abase formed between the collector and the emitter, including a first ferromagnetic metal layer variable in its magnetization under an external magnetic field; a barrier layer formed between the first ferromagnetic metal layer and one of the collector and the emitter, the other of the collector and the emitter including a semiconductor crystal layer; and a transition metal silicide crystal layer between the semiconductor crystal layer and the base. The transition metal silicide crystal layer may be replaced with a palladium layer, a transition metal nitride layer, or a transition metal carbide layer.
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Mizushima Koichi
Sato Rie
Ngo Ngan V.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
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