Magnetoresistance effect element and magnetic head with...

Details Magnetoresistance effect element and magnetic head with... Magnetoresistance effect element and magnetic head with...

2007-01-23

2007-01-23

Evans, Jefferson (Department: 2627)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

Reexamination Certificate

active

10882364

ABSTRACT:
A magnetoresistance effect has a lamination structure comprising a free layer including at least two ferromagnetic layers, a pinned layer including two ferromagnetic layers; and at least one nano-contact portion composed of a single ferromagnetic layer and disposed between the free layer and the pinned layer. A distance between the free layer and the pinned layer, i.e., thickness of the nano-contact portion in the lamination direction, is not more than Fermi length, preferably less than 100 nm.

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