Method of electroplating copper layers with flat topography

Electrolysis: processes – compositions used therein – and methods – Electrolytic coating – Depositing predominantly single metal or alloy coating on...

Reexamination Certificate

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C257SE21583, C257SE21175

Reexamination Certificate

active

10769605

ABSTRACT:
A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than10micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.

REFERENCES:
patent: 5972192 (1999-10-01), Dubin et al.
patent: 6110346 (2000-08-01), Reid et al.
patent: 6432821 (2002-08-01), Dubin et al.
patent: 2002/0061715 (2002-05-01), Uzoh et al.

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