Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2007-03-06
2007-03-06
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S767000, C257S774000, C257SE23160
Reexamination Certificate
active
10964963
ABSTRACT:
A method of manufacturing a semiconductor device includes the steps of providing a semiconductor substrate (202), forming a dielectric layer (204) over the semiconductor substrate (202), and etching a trench or a via (206) in the dielectric layer (204) to expose a portion of the surface of the semiconductor substrate (202). The method also includes the step of forming a conductive layer (212, 220) within in the trench or the via (206). The method further includes the steps of polishing a portion of the conductive layer (220) and annealing the conductive layer (212, 220) at a predetermined temperature. Moreover, the conductive layer (212, 220) also includes a dopant, and the dopant diffuses substantially to the surface of the top side of the conductive layer (212, 220) to form a dopant oxide layer (212a, 220a) when the conductive layer (212, 220) is annealed at the predetermined temperature and the dopant is exposed to oxygen.
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Jiang Qing-Tang
Jin Changming
Luttmer Joseph D.
Brady W. James
Lee Eugene
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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