Semiconductor laser device

Details Semiconductor laser device Semiconductor laser device

2007-05-15

2007-05-15

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045010, C372S050100

Reexamination Certificate

active

10918358

ABSTRACT:
A semiconductor laser device according to the present invention comprises an optical waveguide laminated structure having: a first first-cladding layer made up of a p-InP layer; a double heterojunction layer of p-AlGaInAs; a second first-cladding layer made up of a p-InP layer; a first light confining layer of p-InGaAsP; an active layer of InGaAsP having a quantum well structure; a second light confining layer of n-InGaAsP; and a second-cladding layer made up of an n-InP layer, and heterojunctions of the second kind are formed at the interfaces between the first first-cladding layer and the double heterojunction layer and between the double heterojunction layer and the second first-cladding layer.

REFERENCES:
patent: 6974974 (2005-12-01), Sato et al.
patent: 2001-320125 (2001-11-01), None

Affiliated with

Also associated with

Rating

Semiconductor laser device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor laser device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor laser device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3765632