Bipolar transistor having reduced collector-base capacitance

Details Bipolar transistor having reduced collector-base capacitance Bipolar transistor having reduced collector-base capacitance

2007-03-13

2007-03-13

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257S522000, C257SE21573, C257SE21581, C438S318000, C438S322000

Reexamination Certificate

active

10708860

ABSTRACT:
Structure and method are provided for forming a bipolar transistor. As disclosed, an intrinsic base layer is provided overlying a collector layer. A low-capacitance region is disposed laterally adjacent the collector layer. The low-capacitance region includes at least one of a dielectric region and a void disposed in an undercut underlying the intrinsic base layer. An emitter layer overlies the intrinsic base layer, and a raised extrinsic base layer overlies the intrinsic base layer.

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