Magnetic random access memory with interconnected write lines

Details Magnetic random access memory with interconnected write lines Magnetic random access memory with interconnected write lines

2007-09-11

2007-09-11

Ho, Hoai V. (Department: 2827)

Static information storage and retrieval

Interconnection arrangements

C365S158000, C365S230060

Reexamination Certificate

active

11217296

ABSTRACT:
A magnetic random access memory includes memory cells which store information using an internal magnetization direction. A first write line includes a first extending portion, a second extending portion and a first connection portion. The first extends portion extends along a first direction and has a first end and a second end. The second extending portion extends along the first direction and has a third end facing the first end and a fourth end facing the second end. The first connection portion connects the first end and the third end. A second write line and the first write line sandwiches one of the memory cells. First peripheral circuits are connected to the first connection portion and to at least one of the second end and the fourth end.

REFERENCES:
patent: 6807086 (2004-10-01), Kajiyama
patent: 6912152 (2005-06-01), Iwata et al.
patent: 2004-206788 (2004-07-01), None
Roy Scheuerlein, et al., “A 10ns Read and Write Non-Volatile Memory Array Using a Magnetic Tunnel Junction and FET Switch in Each Cell”, 2000 IEEE International Solid-State Circuits Conference, TA 7.2, pp. 128-129.
M. Durlam, et al., “Nonvolatile RAM Based on Magnetic Tunnel Junction Elements”, 2000 IEEE International Solid-State Circuits Conference, TA 7.3, pp. 130-131.
M. Durlam, et al., “A 0.18μm 4Mb Toggling MRAM”, 2003 IEEE.

Affiliated with

Also associated with

Rating

Magnetic random access memory with interconnected write lines does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Magnetic random access memory with interconnected write lines, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Magnetic random access memory with interconnected write lines will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3764898