Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate
Reexamination Certificate
2007-07-17
2007-07-17
Picardat, Kevin M. (Department: 2822)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Thinning of semiconductor substrate
C438S455000, C438S456000, C438S977000
Reexamination Certificate
active
10931847
ABSTRACT:
A method of fabricating a thinned, reinforced semiconductor wafer is disclosed. Particularly, a semiconductor wafer may be provided and a plurality of separate semiconductor dice may be formed upon a surface thereof. At least one region of the semiconductor wafer may be thinned and at least one reinforcement structure for reinforcing the semiconductor wafer may be formed. A semiconductor wafer is disclosed comprising at least one thinned region and at least one reinforcement structure having a first portion and a second portion extending from respective thinned surfaces of the at least one thinned region. A method of designing a semiconductor wafer is disclosed wherein at least one region thereof is selected for thinning. Remaining unthinned regions of the semiconductor wafer may be selected for forming at least one reinforcement structure. At least one semiconductor die location may be selected within the at least one thinned region.
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Micro)n Technology, Inc.
Picardat Kevin M.
TraskBritt
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