Magnetoresistance effect element, its manufacturing method,...

Details Magnetoresistance effect element, its manufacturing method,... Magnetoresistance effect element, its manufacturing method,...

2007-09-04

2007-09-04

Bernatz, Kevin M. (Department: 1773)

Dynamic magnetic information storage or retrieval

Head

Magnetoresistive reproducing head

C428S811100, C428S811500

Reexamination Certificate

active

10935578

ABSTRACT:
A magnetoresistance effect element includes a first ferromagnetic layer (1), insulating layer (3) overlying the first ferromagnetic layer, and second ferromagnetic layer (2) overlying the insulating layer. The insulating layer has formed a through hole (A) having an opening width not larger than 20 nm, and the first and second ferromagnetic layers are connected to each other via the through hole.

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